Infineon Technologies - IPP65R065C7XKSA1

KEY Part #: K6416734

IPP65R065C7XKSA1 Utu (USD) [17816Stock Ngahau]

  • 1 pcs$2.45326
  • 500 pcs$2.44105

Te waahanga waahanga:
IPP65R065C7XKSA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH 650V TO-220-3.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - FET, MOSFETs - RF, Tauhoko - DIACs, SIDACs, Transistors - IGBTs - Arrays, Diode - Nga Kete Aiana, Tauhoko - TRIACs, Tauhou - IGBT - Mahi, Diode - Kaiwhiwhi - Kotahi and Transistors - Bipolar (BJT) - Arrays ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP65R065C7XKSA1 Nga Hua Hua

Te waahanga waahanga : IPP65R065C7XKSA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH 650V TO-220-3
Toa : CoolMOS™ C7
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 650V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 33A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 10V
Rds On (Max) @ Id, Vgs : 65 mOhm @ 17.1A, 10V
Vgs (th) (Max) @ Id : 4V @ 850µA
Kaari Gate (Qg) (Max) @ Vgs : 64nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 3020pF @ 400V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 171W (Tc)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Through Hole
Paetukutuku Pūrere Kaiwhakarato : PG-TO220-3
Paepae / Take : TO-220-3

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