SIHB12N50E-GE3 Utu (USD) [35558Stock Ngahau]
- 1 pcs$1.09960
- 10 pcs$0.99173
- 100 pcs$0.79681
- 500 pcs$0.61973
- 1,000 pcs$0.51349
- Te waahanga waahanga:
- SIHB12N50E-GE3
- Kaihanga:
- Vishay Siliconix
- Whakaahuatanga Taipitopito:
- MOSFET N-CH 500V 10.5A TO-263.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Taumanako - SCR, Tauhoko - DIACs, SIDACs, Transistors - Bipolar (BJT) - Kotahi, Diode - Zener - Kotahi, Diode - RF, Diode - Zener - Tuhinga, Transistors - Bipolar (BJT) - Arrays and Diode - Rectifiers - Arrays ...
- Whakapai Tinana:
- We specialize in Vishay Siliconix SIHB12N50E-GE3 electronic components. SIHB12N50E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHB12N50E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHB12N50E-GE3 Nga Hua Hua
Te waahanga waahanga :
SIHB12N50E-GE3
Kaihanga :
Vishay Siliconix
Whakaahuatanga :
MOSFET N-CH 500V 10.5A TO-263
Toa :
-
Wāhanga wahi :
Active
Momo FET :
N-Channel
Hangarau :
MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) :
500V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
10.5A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) :
10V
Rds On (Max) @ Id, Vgs :
380 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
50nC @ 10V
Vgs (Max) :
±30V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
886pF @ 100V
Āhuahanga FET :
-
Te Whakamau Kaha (Max) :
114W (Tc)
Taumaha Mahi :
-55°C ~ 150°C (TJ)
Momo Momo :
Surface Mount
Paetukutuku Pūrere Kaiwhakarato :
D²PAK (TO-263)
Paepae / Take :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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