Infineon Technologies - IPP062NE7N3GXKSA1

KEY Part #: K6418586

IPP062NE7N3GXKSA1 Utu (USD) [69225Stock Ngahau]

  • 1 pcs$0.56484
  • 500 pcs$0.51816

Te waahanga waahanga:
IPP062NE7N3GXKSA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH 75V 80A TO220-3.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - IGBTs - Kotahi, Te Tauira P taraihi Mana, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Diode - Zener - Tuhinga, Transistors - FETs, MOSFETs - Arrays, Transistors - JFET, Transistors - FETs, MOSFETs - Kotahi and Transistors - Takenga Motuhake ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP062NE7N3GXKSA1 Nga Hua Hua

Te waahanga waahanga : IPP062NE7N3GXKSA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH 75V 80A TO220-3
Toa : OptiMOS™
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 75V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 80A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 10V
Rds On (Max) @ Id, Vgs : 6.2 mOhm @ 73A, 10V
Vgs (th) (Max) @ Id : 3.8V @ 70µA
Kaari Gate (Qg) (Max) @ Vgs : 55nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 3840pF @ 37.5V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 136W (Tc)
Taumaha Mahi : -55°C ~ 175°C (TJ)
Momo Momo : Through Hole
Paetukutuku Pūrere Kaiwhakarato : PG-TO220-3
Paepae / Take : TO-220-3