Nexperia USA Inc. - PSMN102-200Y,115

KEY Part #: K6416912

PSMN102-200Y,115 Utu (USD) [145442Stock Ngahau]

  • 1 pcs$0.25558
  • 1,500 pcs$0.25431

Te waahanga waahanga:
PSMN102-200Y,115
Kaihanga:
Nexperia USA Inc.
Whakaahuatanga Taipitopito:
MOSFET N-CH 200V 21.5A LFPAK.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Kotahi, Transistors - Bipolar (BJT) - Arrays, Te Tauira P taraihi Mana, Transistors - IGBTs - Kotahi, Transistors - FETs, MOSFETs - Kotahi, Diode - Kaiwhiwhi - Kotahi, Diode - Zener - Kotahi and Diode - Rectifiers - Arrays ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PSMN102-200Y,115 Nga Hua Hua

Te waahanga waahanga : PSMN102-200Y,115
Kaihanga : Nexperia USA Inc.
Whakaahuatanga : MOSFET N-CH 200V 21.5A LFPAK
Toa : TrenchMOS™
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 200V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 21.5A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 10V
Rds On (Max) @ Id, Vgs : 102 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id : 4V @ 1mA
Kaari Gate (Qg) (Max) @ Vgs : 30.7nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 1568pF @ 30V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 113W (Tc)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : LFPAK56, Power-SO8
Paepae / Take : SC-100, SOT-669

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