Vishay Siliconix - SIB412DK-T1-GE3

KEY Part #: K6407842

[833Stock Ngahau]


    Te waahanga waahanga:
    SIB412DK-T1-GE3
    Kaihanga:
    Vishay Siliconix
    Whakaahuatanga Taipitopito:
    MOSFET N-CH 20V 9A SC75-6.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Tauhou - IGBT - Mahi, Diode - Zener - Tuhinga, Transistors - Bipolar (BJT) - Arrays, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Transistors - FET, MOSFETs - RF, Taumanako - SCR, Diode - Rectifiers - Arrays and Te Tauira P taraihi Mana ...
    Whakapai Tinana:
    We specialize in Vishay Siliconix SIB412DK-T1-GE3 electronic components. SIB412DK-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIB412DK-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SIB412DK-T1-GE3 Nga Hua Hua

    Te waahanga waahanga : SIB412DK-T1-GE3
    Kaihanga : Vishay Siliconix
    Whakaahuatanga : MOSFET N-CH 20V 9A SC75-6
    Toa : TrenchFET®
    Wāhanga wahi : Obsolete
    Momo FET : N-Channel
    Hangarau : MOSFET (Metal Oxide)
    Whakahinuhinu ki te Rauemi Waiata (Vds) : 20V
    Akuanui - Tonu Tonu (Id) @ 25 ° C : 9A (Tc)
    Koraha Motuhake (RW RW On, Min Rds I) : 1.8V, 4.5V
    Rds On (Max) @ Id, Vgs : 34 mOhm @ 6.6A, 4.5V
    Vgs (th) (Max) @ Id : 1V @ 250µA
    Kaari Gate (Qg) (Max) @ Vgs : 10.16nC @ 5V
    Vgs (Max) : ±8V
    Te Mahinga Whakauru (Ciss) (Max) @ Vds : 535pF @ 10V
    Āhuahanga FET : -
    Te Whakamau Kaha (Max) : 2.4W (Ta), 13W (Tc)
    Taumaha Mahi : -55°C ~ 150°C (TJ)
    Momo Momo : Surface Mount
    Paetukutuku Pūrere Kaiwhakarato : PowerPAK® SC-75-6L Single
    Paepae / Take : PowerPAK® SC-75-6L

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