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  1. Whare
  2. Nga Hua
  3. DRAM
  4. DDR4
  5. K4A8G045WC-BCRC

Samsung Semiconductor - K4A8G045WC-BCRC

KEY Part #: K7359593

[25285Stock Ngahau]

    Te waahanga waahanga:
    K4A8G045WC-BCRC
    Kaihanga:
    Samsung Semiconductor
    Whakaahuatanga Taipitopito:
    8 Gb 2G x 4 2400 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: LPDDR4X, SLC Nand, MODULE, HBM Aquabolt, GDDR5, LPDDR4, HBM Flarebolt and DDR4 ...
    Whakapai Tinana:
    We specialize in Samsung Semiconductor K4A8G045WC-BCRC electronic components. K4A8G045WC-BCRC can be shipped within 24 hours after order. If you have any demands for K4A8G045WC-BCRC, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4A8G045WC-BCRC Nga Hua Hua

    Te waahanga waahanga : K4A8G045WC-BCRC
    Kaihanga : Samsung Semiconductor
    Whakaahuatanga : 8 Gb 2G x 4 2400 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production
    Toa : DDR4
    kiato : 8 Gb
    Org. : 2G x 4
    tere : 2400 Mbps
    ngaohiko : 1.2 V
    Temp. : 0 ~ 85 °C
    mōkī : 78FBGA
    Tūnga hua : Mass Production

    Nga Pūrongo Hou

    Samsung Rolls Out Industry’s First 8GB LPDDR4 DRAM Package
    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    Evolving Mobile Solutions: Samsung at MWC 2018
    Bringing Artificial Intelligence to Devices Everywhere
    High Bandwidth Memory is Catching on for Data-intensive Computing
    Mass Production of Fifth-Generation V-NAND has Started
    The Ultra-Low Latency SSD, Z-SSD
    Speed for the next generation of mobile devices
    How Will 5G Impact on Memory?
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Samsung’s PM1733 SSD and High Density DIMMs Support AMD EPYC™ 7002 Series Processor
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Kia Korero Ma Te Korero
    • K4A4G085WE-BIRC

      Samsung Semiconductor

      4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

    • K4ABG165WA-MCWE

      Samsung Semiconductor

      32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

    • K4A4G085WE-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

    • K4A4G085WF-BCTD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

    • K4A4G085WF-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

    • K4A4G165WE-BCWE

      Samsung Semiconductor

      4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.

    Nga Wahanga Panu