Vishay Siliconix - SIDR626DP-T1-GE3

KEY Part #: K6405265

SIDR626DP-T1-GE3 Utu (USD) [68601Stock Ngahau]

  • 1 pcs$0.56997

Te waahanga waahanga:
SIDR626DP-T1-GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET N-CHAN 60V.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Tauhoko - SCR - Mahi, Transistors - IGBTs - Arrays, Taumanako - SCR, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Transistors - FETs, MOSFETs - Kotahi, Transistors - Whakahoahoa Whakahoahoa, Transistors - FET, MOSFETs - RF and Diode - Rectifiers - Arrays ...
Whakapai Tinana:
We specialize in Vishay Siliconix SIDR626DP-T1-GE3 electronic components. SIDR626DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIDR626DP-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIDR626DP-T1-GE3 Nga Hua Hua

Te waahanga waahanga : SIDR626DP-T1-GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET N-CHAN 60V
Toa : TrenchFET® Gen IV
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 60V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 42.8A (Ta), 100A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 6V, 10V
Rds On (Max) @ Id, Vgs : 1.7 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 3.4V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 102nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 5130pF @ 30V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 6.25W (Ta), 125W (Tc)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PowerPAK® SO-8DC
Paepae / Take : PowerPAK® SO-8

Kia Korero Ma Te Korero