SQS966ENW-T1_GE3 Utu (USD) [218486Stock Ngahau]
- 1 pcs$0.16929
- Te waahanga waahanga:
- SQS966ENW-T1_GE3
- Kaihanga:
- Vishay Siliconix
- Whakaahuatanga Taipitopito:
- MOSFET N-CHAN 60V.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Kotahi, Tauhoko - SCR - Mahi, Diode - Kaiwhiwhi - Kotahi, Tauhoko - TRIACs, Transistors - Whakahoahoa Whakahoahoa, Diode - RF, Taumanako - SCR and Tauhoko - DIACs, SIDACs ...
- Whakapai Tinana:
- We specialize in Vishay Siliconix SQS966ENW-T1_GE3 electronic components. SQS966ENW-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQS966ENW-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQS966ENW-T1_GE3 Nga Hua Hua
Te waahanga waahanga :
SQS966ENW-T1_GE3
Kaihanga :
Vishay Siliconix
Whakaahuatanga :
MOSFET N-CHAN 60V
Toa :
Automotive, AEC-Q101, TrenchFET®
Wāhanga wahi :
Active
Momo FET :
2 N-Channel (Dual)
Āhuahanga FET :
Standard
Whakahinuhinu ki te Rauemi Waiata (Vds) :
60V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
6A (Tc)
Rds On (Max) @ Id, Vgs :
36 mOhm @ 1.25A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
8.8nC @ 10V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
572pF @ 25V
Te Mana - Max :
27.8W (Tc)
Taumaha Mahi :
-55°C ~ 175°C (TJ)
Momo Momo :
Surface Mount
Paepae / Take :
PowerPAK® 1212-8W
Paetukutuku Pūrere Kaiwhakarato :
PowerPAK® 1212-8W
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