Vishay Siliconix - SI4143DY-T1-GE3

KEY Part #: K6403538

SI4143DY-T1-GE3 Utu (USD) [277956Stock Ngahau]

  • 1 pcs$0.37629
  • 10 pcs$0.31126
  • 100 pcs$0.24015
  • 500 pcs$0.17790
  • 1,000 pcs$0.14232

Te waahanga waahanga:
SI4143DY-T1-GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET P-CHANNEL 30V 25.3A 8SO.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - JFET, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Transistors - Bipolar (BJT) - Arrays, Transistors - FET, MOSFETs - RF, Transistors - IGBTs - Arrays, Transistors - Whakahoahoa Whakahoahoa, Diode - Nga Kete Aiana and Diode - Zener - Tuhinga ...
Whakapai Tinana:
We specialize in Vishay Siliconix SI4143DY-T1-GE3 electronic components. SI4143DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4143DY-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI4143DY-T1-GE3 Nga Hua Hua

Te waahanga waahanga : SI4143DY-T1-GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET P-CHANNEL 30V 25.3A 8SO
Toa : TrenchFET®
Wāhanga wahi : Active
Momo FET : P-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 30V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 25.3A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 6.2 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 167nC @ 10V
Vgs (Max) : ±25V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 6630pF @ 15V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 6W (Tc)
Taumaha Mahi : -55°C ~ 150°C (TA)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : 8-SO
Paepae / Take : 8-SOIC (0.154", 3.90mm Width)