Infineon Technologies - IPP16CN10NGHKSA1

KEY Part #: K6419190

IPP16CN10NGHKSA1 Utu (USD) [96229Stock Ngahau]

  • 1 pcs$0.40633
  • 500 pcs$0.39008

Te waahanga waahanga:
IPP16CN10NGHKSA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH 100V TO-220.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - RF, Tauhou - IGBT - Mahi, Diode - Zener - Kotahi, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays, Te Tauira P taraihi Mana and Transistors - FETs, MOSFETs - Arrays ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP16CN10NGHKSA1 Nga Hua Hua

Te waahanga waahanga : IPP16CN10NGHKSA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH 100V TO-220
Toa : OptiMOS™
Wāhanga wahi : Not For New Designs
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 100V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 53A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 10V
Rds On (Max) @ Id, Vgs : 16.5 mOhm @ 53A, 10V
Vgs (th) (Max) @ Id : 4V @ 61µA
Kaari Gate (Qg) (Max) @ Vgs : 48nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 3220pF @ 50V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 100W (Tc)
Taumaha Mahi : -55°C ~ 175°C (TJ)
Momo Momo : Through Hole
Paetukutuku Pūrere Kaiwhakarato : PG-TO220-3
Paepae / Take : TO-220-3