Vishay Semiconductor Diodes Division - BYG23T-M3/TR

KEY Part #: K6457002

BYG23T-M3/TR Utu (USD) [519967Stock Ngahau]

  • 1 pcs$0.07113
  • 1,800 pcs$0.06623
  • 3,600 pcs$0.06071
  • 5,400 pcs$0.05703
  • 12,600 pcs$0.05335

Te waahanga waahanga:
BYG23T-M3/TR
Kaihanga:
Vishay Semiconductor Diodes Division
Whakaahuatanga Taipitopito:
DIODE AVALANCHE 1300V 1A DO214AC. Rectifiers 1A 1300V High Volt Ultrafast
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - JFET, Transistors - IGBTs - Kotahi, Transistors - FET, MOSFETs - RF, Tauhoko - SCR - Mahi, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Transistors - FETs, MOSFETs - Arrays, Diode - Zener - Kotahi and Taumanako - SCR ...
Whakapai Tinana:
We specialize in Vishay Semiconductor Diodes Division BYG23T-M3/TR electronic components. BYG23T-M3/TR can be shipped within 24 hours after order. If you have any demands for BYG23T-M3/TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYG23T-M3/TR Nga Hua Hua

Te waahanga waahanga : BYG23T-M3/TR
Kaihanga : Vishay Semiconductor Diodes Division
Whakaahuatanga : DIODE AVALANCHE 1300V 1A DO214AC
Toa : -
Wāhanga wahi : Active
Momo Diode : Avalanche
Huringa - DC Revers (Vr) (Max) : 1300V
Koinei - He Whakatau I Whakatauhia (Io) : 1A (DC)
Tauira - Whakamua (Vf) (Max) @ If : 1.9V @ 1A
Tere : Fast Recovery =< 500ns, > 200mA (Io)
Te Whakahoutanga Whakaora (trr) : 75ns
Ko tenei - Te Hurorirori Reihi @ Ngar : 5µA @ 1300V
Te Aukati @ Vr, F : 9pF @ 4V, 1MHz
Momo Momo : Surface Mount
Paepae / Take : DO-214AC, SMA
Paetukutuku Pūrere Kaiwhakarato : DO-214AC (SMA)
Taumaha Mahi - Kawenga : -55°C ~ 150°C

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