Vishay Semiconductor Diodes Division - VS-GB100LP120N

KEY Part #: K6533277

VS-GB100LP120N Utu (USD) [1197Stock Ngahau]

  • 1 pcs$36.16500
  • 24 pcs$34.44288

Te waahanga waahanga:
VS-GB100LP120N
Kaihanga:
Vishay Semiconductor Diodes Division
Whakaahuatanga Taipitopito:
IGBT 1200V 200A 658W INT-A-PAK.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - IGBTs - Kotahi, Tauhou - IGBT - Mahi, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Kotahi, Transistors - FETs, MOSFETs - Kotahi, Transistors - Takenga Motuhake, Tauhoko - TRIACs and Te Tauira P taraihi Mana ...
Whakapai Tinana:
We specialize in Vishay Semiconductor Diodes Division VS-GB100LP120N electronic components. VS-GB100LP120N can be shipped within 24 hours after order. If you have any demands for VS-GB100LP120N, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-GB100LP120N Nga Hua Hua

Te waahanga waahanga : VS-GB100LP120N
Kaihanga : Vishay Semiconductor Diodes Division
Whakaahuatanga : IGBT 1200V 200A 658W INT-A-PAK
Toa : -
Wāhanga wahi : Active
Momo IGBT : -
Hōutuutu : Single
Paati - Whakahoki Kaikaha Kohikohi (Max) : 1200V
Te Oranga - Te Kaikohi (Ic) (Max) : 200A
Te Mana - Max : 658W
Vce (on) (Max) @ Vge, Ic : 1.8V @ 15V, 100A (Typ)
I tenei wa - Kohinga Kohinga (Max) : 1mA
Te Mahinga Whakauru (Kati) @ Vce : 7.43nF @ 25V
Whakautu : Standard
NTC Thermistor : No
Taumaha Mahi : -40°C ~ 150°C (TJ)
Momo Momo : Chassis Mount
Paepae / Take : INT-A-Pak
Paetukutuku Pūrere Kaiwhakarato : INT-A-PAK

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