Vishay Siliconix - SIHB25N50E-GE3

KEY Part #: K6399781

SIHB25N50E-GE3 Utu (USD) [22480Stock Ngahau]

  • 1 pcs$1.83331

Te waahanga waahanga:
SIHB25N50E-GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET N-CH 500V 26A TO263.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Te Tauira P taraihi Mana, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Transistors - Bipolar (BJT) - Kotahi, Transistors - Bipolar (BJT) - Arrays, Diode - Zener - Kotahi and Tauhou - IGBT - Mahi ...
Whakapai Tinana:
We specialize in Vishay Siliconix SIHB25N50E-GE3 electronic components. SIHB25N50E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHB25N50E-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHB25N50E-GE3 Nga Hua Hua

Te waahanga waahanga : SIHB25N50E-GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET N-CH 500V 26A TO263
Toa : -
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 500V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 26A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 10V
Rds On (Max) @ Id, Vgs : 145 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 86nC @ 10V
Vgs (Max) : ±30V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 1980pF @ 100V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 250W (Tc)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : TO-263 (D²Pak)
Paepae / Take : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB