Toshiba Semiconductor and Storage - HN3C10FUTE85LF

KEY Part #: K6463970

[9991Stock Ngahau]


    Te waahanga waahanga:
    HN3C10FUTE85LF
    Kaihanga:
    Toshiba Semiconductor and Storage
    Whakaahuatanga Taipitopito:
    RF TRANS 2 NPN 12V 7GHZ US6.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Diode - Nga Kete Aiana, Transistors - Takenga Motuhake, Transistors - Whakahoahoa Whakahoahoa, Transistors - FET, MOSFETs - RF, Transistors - FETs, MOSFETs - Kotahi, Tauhou - IGBT - Mahi and Diode - Zener - Tuhinga ...
    Whakapai Tinana:
    We specialize in Toshiba Semiconductor and Storage HN3C10FUTE85LF electronic components. HN3C10FUTE85LF can be shipped within 24 hours after order. If you have any demands for HN3C10FUTE85LF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    HN3C10FUTE85LF Nga Hua Hua

    Te waahanga waahanga : HN3C10FUTE85LF
    Kaihanga : Toshiba Semiconductor and Storage
    Whakaahuatanga : RF TRANS 2 NPN 12V 7GHZ US6
    Toa : -
    Wāhanga wahi : Active
    Momo Whakawhiti : 2 NPN (Dual)
    Paati - Whakahoki Kaikaha Kohikohi (Max) : 12V
    Auau - Te whakawhiti : 7GHz
    Whakaahua Noise (dB Tip @ f) : 1.1dB @ 1GHz
    Koko : 11.5dB
    Te Mana - Max : 200mW
    DC Gain o nāianei (hFE) (Min) @ Ic, Vce : 80 @ 20mA, 10V
    Te Oranga - Te Kaikohi (Ic) (Max) : 80mA
    Taumaha Mahi : -
    Momo Momo : Surface Mount
    Paepae / Take : 6-TSSOP, SC-88, SOT-363
    Paetukutuku Pūrere Kaiwhakarato : US6

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