Infineon Technologies - IPN60R2K1CEATMA1

KEY Part #: K6421323

IPN60R2K1CEATMA1 Utu (USD) [451118Stock Ngahau]

  • 1 pcs$0.08199
  • 3,000 pcs$0.06763

Te waahanga waahanga:
IPN60R2K1CEATMA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET NCH 600V 3.7A SOT223.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Whakahoahoa Whakahoahoa, Diode - RF, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Transistors - FETs, MOSFETs - Kotahi, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Transistors - Bipolar (BJT) - Kotahi, I mua i te m and Diode - Rectifiers - Arrays ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPN60R2K1CEATMA1 Nga Hua Hua

Te waahanga waahanga : IPN60R2K1CEATMA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET NCH 600V 3.7A SOT223
Toa : CoolMOS™
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 600V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 3.7A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 10V
Rds On (Max) @ Id, Vgs : 2.1 Ohm @ 800mA, 10V
Vgs (th) (Max) @ Id : 3.5V @ 60µA
Kaari Gate (Qg) (Max) @ Vgs : 6.7nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 140pF @ 100V
Āhuahanga FET : Super Junction
Te Whakamau Kaha (Max) : 5W (Tc)
Taumaha Mahi : -40°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PG-SOT223
Paepae / Take : SOT-223-3

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