Microsemi Corporation - APTM100A13DG

KEY Part #: K6522573

APTM100A13DG Utu (USD) [590Stock Ngahau]

  • 1 pcs$78.99321
  • 100 pcs$78.60021

Te waahanga waahanga:
APTM100A13DG
Kaihanga:
Microsemi Corporation
Whakaahuatanga Taipitopito:
MOSFET 2N-CH 1000V 65A SP6.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Arrays, Te Tauira P taraihi Mana, Taumanako - SCR, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Diode - Zener - Tuhinga, Transistors - FET, MOSFETs - RF and Transistors - JFET ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTM100A13DG Nga Hua Hua

Te waahanga waahanga : APTM100A13DG
Kaihanga : Microsemi Corporation
Whakaahuatanga : MOSFET 2N-CH 1000V 65A SP6
Toa : -
Wāhanga wahi : Active
Momo FET : 2 N-Channel (Half Bridge)
Āhuahanga FET : Standard
Whakahinuhinu ki te Rauemi Waiata (Vds) : 1000V (1kV)
Akuanui - Tonu Tonu (Id) @ 25 ° C : 65A
Rds On (Max) @ Id, Vgs : 156 mOhm @ 32.5A, 10V
Vgs (th) (Max) @ Id : 5V @ 6mA
Kaari Gate (Qg) (Max) @ Vgs : 562nC @ 10V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 15200pF @ 25V
Te Mana - Max : 1250W
Taumaha Mahi : -40°C ~ 150°C (TJ)
Momo Momo : Chassis Mount
Paepae / Take : SP6
Paetukutuku Pūrere Kaiwhakarato : SP6