Infineon Technologies - IPB50R199CPATMA1

KEY Part #: K6418187

IPB50R199CPATMA1 Utu (USD) [54961Stock Ngahau]

  • 1 pcs$0.71142
  • 1,000 pcs$0.67987

Te waahanga waahanga:
IPB50R199CPATMA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH 550V 17A TO-263.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Tauhoko - SCR - Mahi, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Diode - Nga Kete Aiana, Diode - Zener - Kotahi, Transistors - Takenga Motuhake, Transistors - IGBTs - Kotahi and Transistors - IGBTs - Arrays ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB50R199CPATMA1 Nga Hua Hua

Te waahanga waahanga : IPB50R199CPATMA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH 550V 17A TO-263
Toa : CoolMOS™
Wāhanga wahi : Not For New Designs
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 550V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 17A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 10V
Rds On (Max) @ Id, Vgs : 199 mOhm @ 9.9A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 660µA
Kaari Gate (Qg) (Max) @ Vgs : 45nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 1800pF @ 100V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 139W (Tc)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PG-TO263-3-2
Paepae / Take : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB