SIA817EDJ-T1-GE3 Utu (USD) [471021Stock Ngahau]
- 1 pcs$0.07853
- 3,000 pcs$0.07418
- Te waahanga waahanga:
- SIA817EDJ-T1-GE3
- Kaihanga:
- Vishay Siliconix
- Whakaahuatanga Taipitopito:
- MOSFET P-CH 30V 4.5A SC-70-6.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - FETs, MOSFETs - Kotahi, Diode - RF, Transistors - Takenga Motuhake, Transistors - Bipolar (BJT) - Kotahi, Transistors - JFET, Diode - Rectifiers - Arrays, Taumanako - SCR and Diode - Nga Kete Aiana ...
- Whakapai Tinana:
- We specialize in Vishay Siliconix SIA817EDJ-T1-GE3 electronic components. SIA817EDJ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIA817EDJ-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIA817EDJ-T1-GE3 Nga Hua Hua
Te waahanga waahanga :
SIA817EDJ-T1-GE3
Kaihanga :
Vishay Siliconix
Whakaahuatanga :
MOSFET P-CH 30V 4.5A SC-70-6
Toa :
LITTLE FOOT®
Wāhanga wahi :
Active
Momo FET :
P-Channel
Hangarau :
MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) :
30V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
4.5A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) :
2.5V, 10V
Rds On (Max) @ Id, Vgs :
65 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id :
1.3V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
23nC @ 10V
Vgs (Max) :
±12V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
600pF @ 15V
Āhuahanga FET :
Schottky Diode (Isolated)
Te Whakamau Kaha (Max) :
1.9W (Ta), 6.5W (Tc)
Taumaha Mahi :
-55°C ~ 150°C (TJ)
Momo Momo :
Surface Mount
Paetukutuku Pūrere Kaiwhakarato :
PowerPAK® SC-70-6 Dual
Paepae / Take :
PowerPAK® SC-70-6 Dual
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