Infineon Technologies - IPD053N08N3GATMA1

KEY Part #: K6415732

IPD053N08N3GATMA1 Utu (USD) [88475Stock Ngahau]

  • 1 pcs$0.44194
  • 2,500 pcs$0.40543

Te waahanga waahanga:
IPD053N08N3GATMA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH 80V 90A TO252-3.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Tauhoko - DIACs, SIDACs, Transistors - Takenga Motuhake, Diode - RF, Transistors - Bipolar (BJT) - Arrays, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Transistors - Whakahoahoa Whakahoahoa, Tauhou - IGBT - Mahi and Taumanako - SCR ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPD053N08N3GATMA1 Nga Hua Hua

Te waahanga waahanga : IPD053N08N3GATMA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH 80V 90A TO252-3
Toa : OptiMOS™
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 80V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 90A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 6V, 10V
Rds On (Max) @ Id, Vgs : 5.3 mOhm @ 90A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 90µA
Kaari Gate (Qg) (Max) @ Vgs : 69nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 4750pF @ 40V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 150W (Tc)
Taumaha Mahi : -55°C ~ 175°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PG-TO252-3
Paepae / Take : TO-252-3, DPak (2 Leads + Tab), SC-63