Infineon Technologies - IPB80P03P4L07ATMA1

KEY Part #: K6419626

IPB80P03P4L07ATMA1 Utu (USD) [122022Stock Ngahau]

  • 1 pcs$0.30312
  • 1,000 pcs$0.27813

Te waahanga waahanga:
IPB80P03P4L07ATMA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET P-CH 30V 80A TO263-3.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Diode - Kaiwhiwhi - Kotahi, Tauhoko - TRIACs, Tauhoko - SCR - Mahi, Tauhoko - DIACs, SIDACs, Transistors - Takenga Motuhake, Transistors - Bipolar (BJT) - Arrays, I mua-Biased and Te Tauira P taraihi Mana ...
Whakapai Tinana:
We specialize in Infineon Technologies IPB80P03P4L07ATMA1 electronic components. IPB80P03P4L07ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB80P03P4L07ATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB80P03P4L07ATMA1 Nga Hua Hua

Te waahanga waahanga : IPB80P03P4L07ATMA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET P-CH 30V 80A TO263-3
Toa : OptiMOS™
Wāhanga wahi : Active
Momo FET : P-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 30V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 80A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 6.9 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id : 2V @ 130µA
Kaari Gate (Qg) (Max) @ Vgs : 80nC @ 10V
Vgs (Max) : +5V, -16V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 5700pF @ 25V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 88W (Tc)
Taumaha Mahi : -55°C ~ 175°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PG-TO263-3-2
Paepae / Take : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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