Microsemi Corporation - APTM100H35FT3G

KEY Part #: K6522678

APTM100H35FT3G Utu (USD) [934Stock Ngahau]

  • 1 pcs$50.00678
  • 100 pcs$49.75799

Te waahanga waahanga:
APTM100H35FT3G
Kaihanga:
Microsemi Corporation
Whakaahuatanga Taipitopito:
MOSFET 4N-CH 1000V 22A SP3.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Kotahi, Tauhoko - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Transistors - Bipolar (BJT) - Arrays, Transistors - JFET, Diode - Kaiwhiwhi - Kotahi, Diode - Zener - Tuhinga and Te Tauira P taraihi Mana ...
Whakapai Tinana:
We specialize in Microsemi Corporation APTM100H35FT3G electronic components. APTM100H35FT3G can be shipped within 24 hours after order. If you have any demands for APTM100H35FT3G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTM100H35FT3G Nga Hua Hua

Te waahanga waahanga : APTM100H35FT3G
Kaihanga : Microsemi Corporation
Whakaahuatanga : MOSFET 4N-CH 1000V 22A SP3
Toa : -
Wāhanga wahi : Active
Momo FET : 4 N-Channel (H-Bridge)
Āhuahanga FET : Standard
Whakahinuhinu ki te Rauemi Waiata (Vds) : 1000V (1kV)
Akuanui - Tonu Tonu (Id) @ 25 ° C : 22A
Rds On (Max) @ Id, Vgs : 420 mOhm @ 11A, 10V
Vgs (th) (Max) @ Id : 5V @ 2.5mA
Kaari Gate (Qg) (Max) @ Vgs : 186nC @ 10V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 5200pF @ 25V
Te Mana - Max : 390W
Taumaha Mahi : -40°C ~ 150°C (TJ)
Momo Momo : Chassis Mount
Paepae / Take : SP3
Paetukutuku Pūrere Kaiwhakarato : SP3