Vishay Semiconductor Diodes Division - VS-GB100NH120N

KEY Part #: K6533226

VS-GB100NH120N Utu (USD) [319Stock Ngahau]

  • 1 pcs$145.22674
  • 12 pcs$138.31110

Te waahanga waahanga:
VS-GB100NH120N
Kaihanga:
Vishay Semiconductor Diodes Division
Whakaahuatanga Taipitopito:
IGBT 1200V 200A 833W INT-A-PAK.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - IGBTs - Arrays, Transistors - Takenga Motuhake, Transistors - Bipolar (BJT) - Arrays, Diode - Zener - Tuhinga, Tauhou - IGBT - Mahi, Tauhoko - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays and Transistors - JFET ...
Whakapai Tinana:
We specialize in Vishay Semiconductor Diodes Division VS-GB100NH120N electronic components. VS-GB100NH120N can be shipped within 24 hours after order. If you have any demands for VS-GB100NH120N, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-GB100NH120N Nga Hua Hua

Te waahanga waahanga : VS-GB100NH120N
Kaihanga : Vishay Semiconductor Diodes Division
Whakaahuatanga : IGBT 1200V 200A 833W INT-A-PAK
Toa : -
Wāhanga wahi : Active
Momo IGBT : -
Hōutuutu : Single
Paati - Whakahoki Kaikaha Kohikohi (Max) : 1200V
Te Oranga - Te Kaikohi (Ic) (Max) : 200A
Te Mana - Max : 833W
Vce (on) (Max) @ Vge, Ic : 2.35V @ 15V, 100A
I tenei wa - Kohinga Kohinga (Max) : 5mA
Te Mahinga Whakauru (Kati) @ Vce : 8.58nF @ 25V
Whakautu : Standard
NTC Thermistor : No
Taumaha Mahi : 150°C (TJ)
Momo Momo : Chassis Mount
Paepae / Take : Double INT-A-PAK (3 + 4)
Paetukutuku Pūrere Kaiwhakarato : Double INT-A-PAK

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