ON Semiconductor - NTLJF3117PT1G

KEY Part #: K6393733

NTLJF3117PT1G Utu (USD) [502748Stock Ngahau]

  • 1 pcs$0.07394
  • 3,000 pcs$0.07357

Te waahanga waahanga:
NTLJF3117PT1G
Kaihanga:
ON Semiconductor
Whakaahuatanga Taipitopito:
MOSFET P-CH 20V 2.3A 6-WDFN.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Rectifiers - Arrays, Transistors - FETs, MOSFETs - Kotahi, Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Kotahi, Diode - Zener - Tuhinga, Transistors - Bipolar (BJT) - Kotahi, Transistors - JFET and Transistors - FETs, MOSFETs - Arrays ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTLJF3117PT1G Nga Hua Hua

Te waahanga waahanga : NTLJF3117PT1G
Kaihanga : ON Semiconductor
Whakaahuatanga : MOSFET P-CH 20V 2.3A 6-WDFN
Toa : µCool™
Wāhanga wahi : Active
Momo FET : P-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 20V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 2.3A (Ta)
Koraha Motuhake (RW RW On, Min Rds I) : 1.8V, 4.5V
Rds On (Max) @ Id, Vgs : 100 mOhm @ 2A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 6.2nC @ 4.5V
Vgs (Max) : ±8V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 531pF @ 10V
Āhuahanga FET : Schottky Diode (Isolated)
Te Whakamau Kaha (Max) : 710mW (Ta)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : 6-WDFN (2x2)
Paepae / Take : 6-WDFN Exposed Pad