Vishay Siliconix - SI4463BDY-T1-GE3

KEY Part #: K6396446

SI4463BDY-T1-GE3 Utu (USD) [133988Stock Ngahau]

  • 1 pcs$0.27605
  • 2,500 pcs$0.23327

Te waahanga waahanga:
SI4463BDY-T1-GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET P-CH 20V 9.8A 8SOIC.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Transistors - Bipolar (BJT) - Kotahi, Tauhoko - TRIACs, Transistors - Bipolar (BJT) - RF, Te Tauira P taraihi Mana, Transistors - Whakahoahoa Whakahoahoa, Transistors - Bipolar (BJT) - Kotahi, I mua i te m and Diode - Kaiwhiwhi - Kotahi ...
Whakapai Tinana:
We specialize in Vishay Siliconix SI4463BDY-T1-GE3 electronic components. SI4463BDY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4463BDY-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI4463BDY-T1-GE3 Nga Hua Hua

Te waahanga waahanga : SI4463BDY-T1-GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET P-CH 20V 9.8A 8SOIC
Toa : TrenchFET®
Wāhanga wahi : Active
Momo FET : P-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 20V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 9.8A (Ta)
Koraha Motuhake (RW RW On, Min Rds I) : 2.5V, 10V
Rds On (Max) @ Id, Vgs : 11 mOhm @ 13.7A, 10V
Vgs (th) (Max) @ Id : 1.4V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 56nC @ 4.5V
Vgs (Max) : ±12V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : -
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 1.5W (Ta)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : 8-SO
Paepae / Take : 8-SOIC (0.154", 3.90mm Width)

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