Infineon Technologies - DF200R12W1H3B27BOMA1

KEY Part #: K6534604

DF200R12W1H3B27BOMA1 Utu (USD) [1809Stock Ngahau]

  • 1 pcs$23.94315

Te waahanga waahanga:
DF200R12W1H3B27BOMA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
IGBT MODULE VCES 1200V 200A.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Kotahi, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Diode - Rectifiers - Arrays, Transistors - FETs, MOSFETs - Kotahi, Diode - Zener - Tuhinga, Transistors - IGBTs - Arrays, Diode - RF and Transistors - Bipolar (BJT) - Arrays, I mua-Biased ...
Whakapai Tinana:
We specialize in Infineon Technologies DF200R12W1H3B27BOMA1 electronic components. DF200R12W1H3B27BOMA1 can be shipped within 24 hours after order. If you have any demands for DF200R12W1H3B27BOMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DF200R12W1H3B27BOMA1 Nga Hua Hua

Te waahanga waahanga : DF200R12W1H3B27BOMA1
Kaihanga : Infineon Technologies
Whakaahuatanga : IGBT MODULE VCES 1200V 200A
Toa : -
Wāhanga wahi : Active
Momo IGBT : -
Hōutuutu : 2 Independent
Paati - Whakahoki Kaikaha Kohikohi (Max) : 1200V
Te Oranga - Te Kaikohi (Ic) (Max) : 30A
Te Mana - Max : 375W
Vce (on) (Max) @ Vge, Ic : 1.3V @ 15V, 30A
I tenei wa - Kohinga Kohinga (Max) : 1mA
Te Mahinga Whakauru (Kati) @ Vce : 2nF @ 25V
Whakautu : Standard
NTC Thermistor : Yes
Taumaha Mahi : -40°C ~ 150°C
Momo Momo : Chassis Mount
Paepae / Take : Module
Paetukutuku Pūrere Kaiwhakarato : Module

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