Infineon Technologies - IPB180N03S4LH0ATMA1

KEY Part #: K6417983

IPB180N03S4LH0ATMA1 Utu (USD) [47632Stock Ngahau]

  • 1 pcs$0.82088
  • 1,000 pcs$0.66957

Te waahanga waahanga:
IPB180N03S4LH0ATMA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH 30V 180A TO263-7-3.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Transistors - JFET, Transistors - Bipolar (BJT) - Kotahi, Te Tauira P taraihi Mana, Transistors - FETs, MOSFETs - Kotahi, Diode - Zener - Tuhinga and Transistors - Bipolar (BJT) - Arrays, I mua-Biased ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB180N03S4LH0ATMA1 Nga Hua Hua

Te waahanga waahanga : IPB180N03S4LH0ATMA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH 30V 180A TO263-7-3
Toa : OptiMOS™
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 30V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 180A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 0.95 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 200µA
Kaari Gate (Qg) (Max) @ Vgs : 300nC @ 10V
Vgs (Max) : ±16V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 23000pF @ 25V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 250W (Tc)
Taumaha Mahi : -55°C ~ 175°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PG-TO263-7-3
Paepae / Take : TO-263-7, D²Pak (6 Leads + Tab)