Infineon Technologies - IPP028N08N3GXKSA1

KEY Part #: K6416565

IPP028N08N3GXKSA1 Utu (USD) [16040Stock Ngahau]

  • 1 pcs$2.25638
  • 10 pcs$2.01532
  • 100 pcs$1.65254
  • 500 pcs$1.33817
  • 1,000 pcs$1.07070

Te waahanga waahanga:
IPP028N08N3GXKSA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH 80V 100A TO220-3.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Taumanako - SCR, Transistors - JFET, Diode - Zener - Tuhinga, Transistors - IGBTs - Arrays, Diode - Nga Kete Aiana and Transistors - Bipolar (BJT) - Kotahi ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP028N08N3GXKSA1 Nga Hua Hua

Te waahanga waahanga : IPP028N08N3GXKSA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH 80V 100A TO220-3
Toa : OptiMOS™
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 80V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 100A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 6V, 10V
Rds On (Max) @ Id, Vgs : 2.8 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 270µA
Kaari Gate (Qg) (Max) @ Vgs : 206nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 14200pF @ 40V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 300W (Tc)
Taumaha Mahi : -55°C ~ 175°C (TJ)
Momo Momo : Through Hole
Paetukutuku Pūrere Kaiwhakarato : PG-TO220-3
Paepae / Take : TO-220-3

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