Vishay Siliconix - SI7810DN-T1-E3

KEY Part #: K6411765

SI7810DN-T1-E3 Utu (USD) [158886Stock Ngahau]

  • 1 pcs$0.23279
  • 3,000 pcs$0.19673

Te waahanga waahanga:
SI7810DN-T1-E3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET N-CH 100V 3.4A 1212-8.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - JFET, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - RF, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Diode - RF, Diode - Zener - Kotahi and Tauhoko - SCR - Mahi ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI7810DN-T1-E3 Nga Hua Hua

Te waahanga waahanga : SI7810DN-T1-E3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET N-CH 100V 3.4A 1212-8
Toa : TrenchFET®
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 100V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 3.4A (Ta)
Koraha Motuhake (RW RW On, Min Rds I) : 6V, 10V
Rds On (Max) @ Id, Vgs : 62 mOhm @ 5.4A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 17nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : -
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 1.5W (Ta)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PowerPAK® 1212-8
Paepae / Take : PowerPAK® 1212-8