Diodes Incorporated - DMN2009LSS-13

KEY Part #: K6394117

DMN2009LSS-13 Utu (USD) [289449Stock Ngahau]

  • 1 pcs$0.12779
  • 2,500 pcs$0.11355

Te waahanga waahanga:
DMN2009LSS-13
Kaihanga:
Diodes Incorporated
Whakaahuatanga Taipitopito:
MOSFET N-CH 20V 12A 8-SOIC.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Tauhou - IGBT - Mahi, Transistors - Bipolar (BJT) - Arrays, Diode - Kaiwhiwhi - Kotahi, Transistors - FETs, MOSFETs - Arrays, Te Tauira P taraihi Mana, Diode - Nga Kete Aiana, Transistors - Bipolar (BJT) - Kotahi, I mua i te m and Tauhoko - TRIACs ...
Whakapai Tinana:
We specialize in Diodes Incorporated DMN2009LSS-13 electronic components. DMN2009LSS-13 can be shipped within 24 hours after order. If you have any demands for DMN2009LSS-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN2009LSS-13 Nga Hua Hua

Te waahanga waahanga : DMN2009LSS-13
Kaihanga : Diodes Incorporated
Whakaahuatanga : MOSFET N-CH 20V 12A 8-SOIC
Toa : -
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 20V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 12A (Ta)
Koraha Motuhake (RW RW On, Min Rds I) : 2.5V, 10V
Rds On (Max) @ Id, Vgs : 8 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id : 1.2V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 58.3nC @ 10V
Vgs (Max) : ±12V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 2555pF @ 10V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 2W (Ta)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : 8-SOP
Paepae / Take : 8-SOIC (0.154", 3.90mm Width)

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