Infineon Technologies - IRF8302MTRPBF

KEY Part #: K6419102

IRF8302MTRPBF Utu (USD) [91467Stock Ngahau]

  • 1 pcs$0.68043
  • 4,800 pcs$0.67705

Te waahanga waahanga:
IRF8302MTRPBF
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH 30V 31A MX.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Rectifiers - Arrays, Transistors - Bipolar (BJT) - RF, Te Tauira P taraihi Mana, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Kotahi and Tauhou - IGBT - Mahi ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF8302MTRPBF Nga Hua Hua

Te waahanga waahanga : IRF8302MTRPBF
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH 30V 31A MX
Toa : HEXFET®
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 30V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 31A (Ta), 190A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1.8 mOhm @ 31A, 10V
Vgs (th) (Max) @ Id : 2.35V @ 150µA
Kaari Gate (Qg) (Max) @ Vgs : 53nC @ 4.5V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 6030pF @ 15V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 2.8W (Ta), 104W (Tc)
Taumaha Mahi : -40°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : DIRECTFET™ MX
Paepae / Take : DirectFET™ Isometric MX