Diodes Incorporated - DMN3190LDW-13

KEY Part #: K6522500

DMN3190LDW-13 Utu (USD) [1192875Stock Ngahau]

  • 1 pcs$0.03101
  • 10,000 pcs$0.02784

Te waahanga waahanga:
DMN3190LDW-13
Kaihanga:
Diodes Incorporated
Whakaahuatanga Taipitopito:
MOSFET 2N-CH 30V 1A SOT363.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Te Tauira P taraihi Mana, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Diode - Zener - Tuhinga, Tauhou - IGBT - Mahi, Diode - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Kotahi and Transistors - FET, MOSFETs - RF ...
Whakapai Tinana:
We specialize in Diodes Incorporated DMN3190LDW-13 electronic components. DMN3190LDW-13 can be shipped within 24 hours after order. If you have any demands for DMN3190LDW-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN3190LDW-13 Nga Hua Hua

Te waahanga waahanga : DMN3190LDW-13
Kaihanga : Diodes Incorporated
Whakaahuatanga : MOSFET 2N-CH 30V 1A SOT363
Toa : -
Wāhanga wahi : Active
Momo FET : 2 N-Channel (Dual)
Āhuahanga FET : Logic Level Gate
Whakahinuhinu ki te Rauemi Waiata (Vds) : 30V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 1A
Rds On (Max) @ Id, Vgs : 190 mOhm @ 1.3A, 10V
Vgs (th) (Max) @ Id : 2.8V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 2nC @ 10V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 87pF @ 20V
Te Mana - Max : 320mW
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paepae / Take : 6-TSSOP, SC-88, SOT-363
Paetukutuku Pūrere Kaiwhakarato : SOT-363