Vishay Siliconix - SI2305CDS-T1-GE3

KEY Part #: K6421498

SI2305CDS-T1-GE3 Utu (USD) [651126Stock Ngahau]

  • 1 pcs$0.05681
  • 3,000 pcs$0.05384

Te waahanga waahanga:
SI2305CDS-T1-GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET P-CH 8V 5.8A SOT23-3.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Zener - Tuhinga, Diode - Kaiwhiwhi - Kotahi, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Transistors - JFET, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Kotahi and Transistors - Bipolar (BJT) - Kotahi ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI2305CDS-T1-GE3 Nga Hua Hua

Te waahanga waahanga : SI2305CDS-T1-GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET P-CH 8V 5.8A SOT23-3
Toa : TrenchFET®
Wāhanga wahi : Active
Momo FET : P-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 8V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 5.8A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 1.8V, 4.5V
Rds On (Max) @ Id, Vgs : 35 mOhm @ 4.4A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 30nC @ 8V
Vgs (Max) : ±8V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 960pF @ 4V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 960mW (Ta), 1.7W (Tc)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : SOT-23-3 (TO-236)
Paepae / Take : TO-236-3, SC-59, SOT-23-3