Vishay Siliconix - SI4906DY-T1-GE3

KEY Part #: K6524091

[3947Stock Ngahau]


    Te waahanga waahanga:
    SI4906DY-T1-GE3
    Kaihanga:
    Vishay Siliconix
    Whakaahuatanga Taipitopito:
    MOSFET 2N-CH 40V 6.6A 8-SOIC.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Kaiwhiwhi - Kotahi, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Tauhoko - DIACs, SIDACs, Transistors - Whakahoahoa Whakahoahoa, Diode - Rectifiers - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - RF and Transistors - IGBTs - Arrays ...
    Whakapai Tinana:
    We specialize in Vishay Siliconix SI4906DY-T1-GE3 electronic components. SI4906DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4906DY-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI4906DY-T1-GE3 Nga Hua Hua

    Te waahanga waahanga : SI4906DY-T1-GE3
    Kaihanga : Vishay Siliconix
    Whakaahuatanga : MOSFET 2N-CH 40V 6.6A 8-SOIC
    Toa : TrenchFET®
    Wāhanga wahi : Obsolete
    Momo FET : 2 N-Channel (Dual)
    Āhuahanga FET : Standard
    Whakahinuhinu ki te Rauemi Waiata (Vds) : 40V
    Akuanui - Tonu Tonu (Id) @ 25 ° C : 6.6A
    Rds On (Max) @ Id, Vgs : 39 mOhm @ 5A, 10V
    Vgs (th) (Max) @ Id : 2.2V @ 250µA
    Kaari Gate (Qg) (Max) @ Vgs : 22nC @ 10V
    Te Mahinga Whakauru (Ciss) (Max) @ Vds : 625pF @ 20V
    Te Mana - Max : 3.1W
    Taumaha Mahi : -55°C ~ 150°C (TJ)
    Momo Momo : Surface Mount
    Paepae / Take : 8-SOIC (0.154", 3.90mm Width)
    Paetukutuku Pūrere Kaiwhakarato : 8-SO

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