Toshiba Semiconductor and Storage - RN2607(TE85L,F)

KEY Part #: K6529153

RN2607(TE85L,F) Utu (USD) [1060332Stock Ngahau]

  • 1 pcs$0.03488

Te waahanga waahanga:
RN2607(TE85L,F)
Kaihanga:
Toshiba Semiconductor and Storage
Whakaahuatanga Taipitopito:
TRANS 2PNP PREBIAS 0.3W SM6.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - IGBTs - Arrays, Diode - Kaiwhiwhi - Kotahi, Transistors - Bipolar (BJT) - RF, Transistors - Whakahoahoa Whakahoahoa, Diode - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Kotahi, Transistors - FETs, MOSFETs - Arrays and Diode - Zener - Tuhinga ...
Whakapai Tinana:
We specialize in Toshiba Semiconductor and Storage RN2607(TE85L,F) electronic components. RN2607(TE85L,F) can be shipped within 24 hours after order. If you have any demands for RN2607(TE85L,F), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RN2607(TE85L,F) Nga Hua Hua

Te waahanga waahanga : RN2607(TE85L,F)
Kaihanga : Toshiba Semiconductor and Storage
Whakaahuatanga : TRANS 2PNP PREBIAS 0.3W SM6
Toa : -
Wāhanga wahi : Active
Momo Whakawhiti : 2 PNP - Pre-Biased (Dual)
Te Oranga - Te Kaikohi (Ic) (Max) : 100mA
Paati - Whakahoki Kaikaha Kohikohi (Max) : 50V
Kaihautū - Papa (R1) : 10 kOhms
Kaikuhiko - Papa Rawhiti (R2) : 47 kOhms
DC Gain o nāianei (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
Te Hapati Vce (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
I tenei wa - Kohinga Kohinga (Max) : 100nA (ICBO)
Auau - Te whakawhiti : 200MHz
Te Mana - Max : 300mW
Momo Momo : Surface Mount
Paepae / Take : SC-74, SOT-457
Paetukutuku Pūrere Kaiwhakarato : SM6

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