Infineon Technologies - IPD053N06N3GBTMA1

KEY Part #: K6404569

[1966Stock Ngahau]


    Te waahanga waahanga:
    IPD053N06N3GBTMA1
    Kaihanga:
    Infineon Technologies
    Whakaahuatanga Taipitopito:
    MOSFET N-CH 60V 90A TO252-3.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Tauhoko - SCR - Mahi, Diode - Zener - Tuhinga, Tauhou - IGBT - Mahi, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Diode - Rectifiers - Arrays and Te Tauira P taraihi Mana ...
    Whakapai Tinana:
    We specialize in Infineon Technologies IPD053N06N3GBTMA1 electronic components. IPD053N06N3GBTMA1 can be shipped within 24 hours after order. If you have any demands for IPD053N06N3GBTMA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IPD053N06N3GBTMA1 Nga Hua Hua

    Te waahanga waahanga : IPD053N06N3GBTMA1
    Kaihanga : Infineon Technologies
    Whakaahuatanga : MOSFET N-CH 60V 90A TO252-3
    Toa : OptiMOS™
    Wāhanga wahi : Obsolete
    Momo FET : N-Channel
    Hangarau : MOSFET (Metal Oxide)
    Whakahinuhinu ki te Rauemi Waiata (Vds) : 60V
    Akuanui - Tonu Tonu (Id) @ 25 ° C : 90A (Tc)
    Koraha Motuhake (RW RW On, Min Rds I) : 10V
    Rds On (Max) @ Id, Vgs : 5.3 mOhm @ 90A, 10V
    Vgs (th) (Max) @ Id : 4V @ 58µA
    Kaari Gate (Qg) (Max) @ Vgs : 82nC @ 10V
    Vgs (Max) : ±20V
    Te Mahinga Whakauru (Ciss) (Max) @ Vds : 6600pF @ 30V
    Āhuahanga FET : -
    Te Whakamau Kaha (Max) : 115W (Tc)
    Taumaha Mahi : -55°C ~ 175°C (TJ)
    Momo Momo : Surface Mount
    Paetukutuku Pūrere Kaiwhakarato : PG-TO252-3
    Paepae / Take : TO-252-3, DPak (2 Leads + Tab), SC-63

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