Vishay Siliconix - SI3529DV-T1-E3

KEY Part #: K6524061

[3957Stock Ngahau]


    Te waahanga waahanga:
    SI3529DV-T1-E3
    Kaihanga:
    Vishay Siliconix
    Whakaahuatanga Taipitopito:
    MOSFET N/P-CH 40V 2.5A 6-TSOP.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - RF, Diode - Rectifiers - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Arrays, Transistors - Whakahoahoa Whakahoahoa, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Transistors - Bipolar (BJT) - Kotahi and Transistors - IGBTs - Kotahi ...
    Whakapai Tinana:
    We specialize in Vishay Siliconix SI3529DV-T1-E3 electronic components. SI3529DV-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI3529DV-T1-E3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI3529DV-T1-E3 Nga Hua Hua

    Te waahanga waahanga : SI3529DV-T1-E3
    Kaihanga : Vishay Siliconix
    Whakaahuatanga : MOSFET N/P-CH 40V 2.5A 6-TSOP
    Toa : TrenchFET®
    Wāhanga wahi : Obsolete
    Momo FET : N and P-Channel
    Āhuahanga FET : Logic Level Gate
    Whakahinuhinu ki te Rauemi Waiata (Vds) : 40V
    Akuanui - Tonu Tonu (Id) @ 25 ° C : 2.5A, 1.95A
    Rds On (Max) @ Id, Vgs : 125 mOhm @ 2.2A, 10V
    Vgs (th) (Max) @ Id : 3V @ 250µA
    Kaari Gate (Qg) (Max) @ Vgs : 7nC @ 10V
    Te Mahinga Whakauru (Ciss) (Max) @ Vds : 205pF @ 20V
    Te Mana - Max : 1.4W
    Taumaha Mahi : -55°C ~ 150°C (TJ)
    Momo Momo : Surface Mount
    Paepae / Take : SOT-23-6 Thin, TSOT-23-6
    Paetukutuku Pūrere Kaiwhakarato : 6-TSOP