SQJ912AEP-T1_GE3 Utu (USD) [152759Stock Ngahau]
- 1 pcs$0.24213
- 3,000 pcs$0.20465
- Te waahanga waahanga:
- SQJ912AEP-T1_GE3
- Kaihanga:
- Vishay Siliconix
- Whakaahuatanga Taipitopito:
- MOSFET 2N-CH 40V 30A PPAK SO-8.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Zener - Tuhinga, Tauhoko - DIACs, SIDACs, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF, Tauhoko - TRIACs, Transistors - FET, MOSFETs - RF, Transistors - FETs, MOSFETs - Arrays and Tauhou - IGBT - Mahi ...
- Whakapai Tinana:
- We specialize in Vishay Siliconix SQJ912AEP-T1_GE3 electronic components. SQJ912AEP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJ912AEP-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQJ912AEP-T1_GE3 Nga Hua Hua
Te waahanga waahanga :
SQJ912AEP-T1_GE3
Kaihanga :
Vishay Siliconix
Whakaahuatanga :
MOSFET 2N-CH 40V 30A PPAK SO-8
Toa :
Automotive, AEC-Q101, TrenchFET®
Wāhanga wahi :
Active
Momo FET :
2 N-Channel (Dual)
Āhuahanga FET :
Standard
Whakahinuhinu ki te Rauemi Waiata (Vds) :
40V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
30A
Rds On (Max) @ Id, Vgs :
9.3 mOhm @ 9.7A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
38nC @ 10V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
1835pF @ 20V
Te Mana - Max :
48W
Taumaha Mahi :
-55°C ~ 175°C (TJ)
Momo Momo :
Surface Mount
Paepae / Take :
PowerPAK® SO-8 Dual
Paetukutuku Pūrere Kaiwhakarato :
PowerPAK® SO-8 Dual
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