Vishay Siliconix - SIHB23N60E-GE3

KEY Part #: K6417755

SIHB23N60E-GE3 Utu (USD) [40414Stock Ngahau]

  • 1 pcs$0.96750
  • 1,000 pcs$0.90851

Te waahanga waahanga:
SIHB23N60E-GE3
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
MOSFET N-CH 600V 23A D2PAK.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Arrays, Tauhoko - SCR - Mahi, Transistors - Takenga Motuhake, Transistors - FETs, MOSFETs - Kotahi, Taumanako - SCR, Transistors - Bipolar (BJT) - Kotahi, Transistors - FET, MOSFETs - RF and Diode - RF ...
Whakapai Tinana:
We specialize in Vishay Siliconix SIHB23N60E-GE3 electronic components. SIHB23N60E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHB23N60E-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHB23N60E-GE3 Nga Hua Hua

Te waahanga waahanga : SIHB23N60E-GE3
Kaihanga : Vishay Siliconix
Whakaahuatanga : MOSFET N-CH 600V 23A D2PAK
Toa : -
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 600V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 23A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 10V
Rds On (Max) @ Id, Vgs : 158 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : 95nC @ 10V
Vgs (Max) : ±30V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 2418pF @ 100V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 227W (Tc)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : D²PAK (TO-263)
Paepae / Take : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Kia Korero Ma Te Korero