SI3127DV-T1-GE3 Utu (USD) [498195Stock Ngahau]
- 1 pcs$0.07424
- 3,000 pcs$0.07013
- Te waahanga waahanga:
- SI3127DV-T1-GE3
- Kaihanga:
- Vishay Siliconix
- Whakaahuatanga Taipitopito:
- MOSFET P-CHAN 60V TSOP6S.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Kotahi, Diode - Zener - Kotahi, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Diode - Nga Kete Aiana, Transistors - Takenga Motuhake, Transistors - FET, MOSFETs - RF and Transistors - Bipolar (BJT) - RF ...
- Whakapai Tinana:
- We specialize in Vishay Siliconix SI3127DV-T1-GE3 electronic components. SI3127DV-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI3127DV-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI3127DV-T1-GE3 Nga Hua Hua
Te waahanga waahanga :
SI3127DV-T1-GE3
Kaihanga :
Vishay Siliconix
Whakaahuatanga :
MOSFET P-CHAN 60V TSOP6S
Toa :
TrenchFET®
Wāhanga wahi :
Active
Momo FET :
P-Channel
Hangarau :
MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) :
60V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
3.5A (Ta), 13A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
89 mOhm @ 1.5A, 4.5V
Vgs (th) (Max) @ Id :
3V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
30nC @ 10V
Vgs (Max) :
±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
833pF @ 20V
Āhuahanga FET :
-
Te Whakamau Kaha (Max) :
2W (Ta), 4.2W (Tc)
Taumaha Mahi :
-55°C ~ 150°C (TJ)
Momo Momo :
Surface Mount
Paetukutuku Pūrere Kaiwhakarato :
6-TSOP
Paepae / Take :
SOT-23-6 Thin, TSOT-23-6
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Kia Korero Ma Te Korero
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