Infineon Technologies - IPD068P03L3GATMA1

KEY Part #: K6420429

IPD068P03L3GATMA1 Utu (USD) [194329Stock Ngahau]

  • 1 pcs$0.19033
  • 2,500 pcs$0.18272

Te waahanga waahanga:
IPD068P03L3GATMA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET P-CH 30V 70A TO252-3.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Tauhoko - SCR - Mahi, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Diode - Nga Kete Aiana, Diode - RF, Te Tauira P taraihi Mana, Transistors - Takenga Motuhake, Transistors - IGBTs - Arrays and Taumanako - SCR ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPD068P03L3GATMA1 Nga Hua Hua

Te waahanga waahanga : IPD068P03L3GATMA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET P-CH 30V 70A TO252-3
Toa : OptiMOS™
Wāhanga wahi : Active
Momo FET : P-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 30V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 70A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 6.8 mOhm @ 70A, 10V
Vgs (th) (Max) @ Id : 2V @ 150µA
Kaari Gate (Qg) (Max) @ Vgs : 91nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 7720pF @ 15V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 100W (Tc)
Taumaha Mahi : -55°C ~ 175°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PG-TO252-3
Paepae / Take : TO-252-3, DPak (2 Leads + Tab), SC-63