HGT1S10N120BNST Utu (USD) [51869Stock Ngahau]
- 1 pcs$0.96859
- 800 pcs$0.96377
- 1,600 pcs$0.81282
- 2,400 pcs$0.77411
- Te waahanga waahanga:
- HGT1S10N120BNST
- Kaihanga:
- ON Semiconductor
- Whakaahuatanga Taipitopito:
- IGBT 1200V 35A 298W TO263AB.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Takenga Motuhake, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Transistors - FETs, MOSFETs - Arrays, Diode - Rectifiers - Arrays, Diode - Nga Kete Aiana, Diode - RF and Transistors - Bipolar (BJT) - Arrays ...
- Whakapai Tinana:
- We specialize in ON Semiconductor HGT1S10N120BNST electronic components. HGT1S10N120BNST can be shipped within 24 hours after order. If you have any demands for HGT1S10N120BNST, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HGT1S10N120BNST Nga Hua Hua
Te waahanga waahanga :
HGT1S10N120BNST
Kaihanga :
ON Semiconductor
Whakaahuatanga :
IGBT 1200V 35A 298W TO263AB
Toa :
-
Wāhanga wahi :
Active
Momo IGBT :
NPT
Paati - Whakahoki Kaikaha Kohikohi (Max) :
1200V
Te Oranga - Te Kaikohi (Ic) (Max) :
35A
Ko te Ake - he Kohinga Kohinga (Icm) :
80A
Vce (on) (Max) @ Vge, Ic :
2.7V @ 15V, 10A
Te Mana - Max :
298W
Te Whakapono Kaha :
320µJ (on), 800µJ (off)
Momo Inputomo :
Standard
Kaari Gate :
100nC
Td (on / off) @ 25 ° C :
23ns/165ns
Te Ainga Whakamatau :
960V, 10A, 10 Ohm, 15V
Te Whakahoutanga Whakaora (trr) :
-
Taumaha Mahi :
-55°C ~ 150°C (TJ)
Momo Momo :
Surface Mount
Paepae / Take :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Paetukutuku Pūrere Kaiwhakarato :
TO-263AB
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