Infineon Technologies - IPD50R1K4CEAUMA1

KEY Part #: K6421367

IPD50R1K4CEAUMA1 Utu (USD) [488871Stock Ngahau]

  • 1 pcs$0.07665
  • 2,500 pcs$0.07627

Te waahanga waahanga:
IPD50R1K4CEAUMA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH 500V 3.1A PG-TO-252.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - Nga Kete Aiana, Transistors - FET, MOSFETs - RF, Te Tauira P taraihi Mana, Transistors - Whakahoahoa Whakahoahoa, Taumanako - SCR, Tauhoko - DIACs, SIDACs, Diode - Zener - Kotahi and Transistors - JFET ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPD50R1K4CEAUMA1 Nga Hua Hua

Te waahanga waahanga : IPD50R1K4CEAUMA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH 500V 3.1A PG-TO-252
Toa : CoolMOS™ CE
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 500V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 3.1A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 13V
Rds On (Max) @ Id, Vgs : 1.4 Ohm @ 900mA, 13V
Vgs (th) (Max) @ Id : 3.5V @ 70µA
Kaari Gate (Qg) (Max) @ Vgs : 8.2nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 178pF @ 100V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 42W (Tc)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PG-TO252-3
Paepae / Take : TO-252-3, DPak (2 Leads + Tab), SC-63

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