Vishay Siliconix - SI8902AEDB-T2-E1

KEY Part #: K6525400

SI8902AEDB-T2-E1 Utu (USD) [278320Stock Ngahau]

  • 1 pcs$0.13290

Te waahanga waahanga:
SI8902AEDB-T2-E1
Kaihanga:
Vishay Siliconix
Whakaahuatanga Taipitopito:
N-CHANNEL 24-V D-S MOSFET.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Te Tauira P taraihi Mana, Tauhoko - TRIACs, Transistors - Bipolar (BJT) - Arrays, Transistors - Whakahoahoa Whakahoahoa, Diode - Nga Kete Aiana, Tauhoko - DIACs, SIDACs, Diode - RF and Transistors - Bipolar (BJT) - Kotahi, I mua i te m ...
Whakapai Tinana:
We specialize in Vishay Siliconix SI8902AEDB-T2-E1 electronic components. SI8902AEDB-T2-E1 can be shipped within 24 hours after order. If you have any demands for SI8902AEDB-T2-E1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI8902AEDB-T2-E1 Nga Hua Hua

Te waahanga waahanga : SI8902AEDB-T2-E1
Kaihanga : Vishay Siliconix
Whakaahuatanga : N-CHANNEL 24-V D-S MOSFET
Toa : TrenchFET®
Wāhanga wahi : Active
Momo FET : 2 N-Channel (Dual)
Āhuahanga FET : Standard
Whakahinuhinu ki te Rauemi Waiata (Vds) : 24V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 11A
Rds On (Max) @ Id, Vgs : 28 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ Id : 900mV @ 250µA
Kaari Gate (Qg) (Max) @ Vgs : -
Te Mahinga Whakauru (Ciss) (Max) @ Vds : -
Te Mana - Max : 5.7W
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paepae / Take : 6-UFBGA
Paetukutuku Pūrere Kaiwhakarato : 6-Micro Foot™ (1.5x1)