SIHB18N60E-GE3 Utu (USD) [51290Stock Ngahau]
- 1 pcs$0.76235
- Te waahanga waahanga:
- SIHB18N60E-GE3
- Kaihanga:
- Vishay Siliconix
- Whakaahuatanga Taipitopito:
- MOSFET N-CH 600V 18A TO263.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Kotahi, Diode - RF, Diode - Nga Kete Aiana, Transistors - FET, MOSFETs - RF, Transistors - FETs, MOSFETs - Arrays, Tauhoko - DIACs, SIDACs, Transistors - JFET and Diode - Kaiwhiwhi - Kotahi ...
- Whakapai Tinana:
- We specialize in Vishay Siliconix SIHB18N60E-GE3 electronic components. SIHB18N60E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHB18N60E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHB18N60E-GE3 Nga Hua Hua
Te waahanga waahanga :
SIHB18N60E-GE3
Kaihanga :
Vishay Siliconix
Whakaahuatanga :
MOSFET N-CH 600V 18A TO263
Toa :
-
Wāhanga wahi :
Active
Momo FET :
N-Channel
Hangarau :
MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) :
600V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
18A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) :
10V
Rds On (Max) @ Id, Vgs :
202 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
92nC @ 10V
Vgs (Max) :
±30V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
1640pF @ 100V
Āhuahanga FET :
-
Te Whakamau Kaha (Max) :
179W (Tc)
Taumaha Mahi :
-55°C ~ 150°C (TJ)
Momo Momo :
Surface Mount
Paetukutuku Pūrere Kaiwhakarato :
TO-263 (D²Pak)
Paepae / Take :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Nga Pūrongo Hou
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