SISS26DN-T1-GE3 Utu (USD) [117334Stock Ngahau]
- 1 pcs$0.31523
- Te waahanga waahanga:
- SISS26DN-T1-GE3
- Kaihanga:
- Vishay Siliconix
- Whakaahuatanga Taipitopito:
- MOSFET N-CHANNEL 60V 60A 1212-8S.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Tauhoko - DIACs, SIDACs, Transistors - FET, MOSFETs - RF, Transistors - Whakahoahoa Whakahoahoa, Diode - Zener - Kotahi, Transistors - FETs, MOSFETs - Kotahi, Diode - Nga Kete Aiana, Taumanako - SCR and Diode - Kaiwhiwhi - Kotahi ...
- Whakapai Tinana:
- We specialize in Vishay Siliconix SISS26DN-T1-GE3 electronic components. SISS26DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISS26DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISS26DN-T1-GE3 Nga Hua Hua
Te waahanga waahanga :
SISS26DN-T1-GE3
Kaihanga :
Vishay Siliconix
Whakaahuatanga :
MOSFET N-CHANNEL 60V 60A 1212-8S
Toa :
TrenchFET® Gen IV
Wāhanga wahi :
Active
Momo FET :
N-Channel
Hangarau :
MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) :
60V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
60A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) :
6V, 10V
Rds On (Max) @ Id, Vgs :
4.5 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
3.6V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
37nC @ 10V
Vgs (Max) :
±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
1710pF @ 30V
Āhuahanga FET :
-
Te Whakamau Kaha (Max) :
57W (Tc)
Taumaha Mahi :
-55°C ~ 150°C (TJ)
Momo Momo :
Surface Mount
Paetukutuku Pūrere Kaiwhakarato :
PowerPAK® 1212-8S (3.3x3.3)
Paepae / Take :
PowerPAK® 1212-8S
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