Infineon Technologies - IPD60R650CEBTMA1

KEY Part #: K6402170

IPD60R650CEBTMA1 Utu (USD) [2797Stock Ngahau]

  • 2,500 pcs$0.13752

Te waahanga waahanga:
IPD60R650CEBTMA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH 600V 7A TO252.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Arrays, I mua-Biased, Tauhoko - TRIACs, Diode - Zener - Tuhinga, Diode - Te Rerekē Rerekē (Kaimoana, Kaimoana), Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Transistors - FETs, MOSFETs - Kotahi and Transistors - IGBTs - Kotahi ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPD60R650CEBTMA1 Nga Hua Hua

Te waahanga waahanga : IPD60R650CEBTMA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH 600V 7A TO252
Toa : CoolMOS™ CE
Wāhanga wahi : Discontinued at Digi-Key
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 600V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 7A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 10V
Rds On (Max) @ Id, Vgs : 650 mOhm @ 2.4A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 200µA
Kaari Gate (Qg) (Max) @ Vgs : 20.5nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 440pF @ 100V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 82W (Tc)
Taumaha Mahi : -40°C ~ 150°C (TJ)
Momo Momo : Surface Mount
Paetukutuku Pūrere Kaiwhakarato : PG-TO252-3
Paepae / Take : TO-252-3, DPak (2 Leads + Tab), SC-63

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