SI8469DB-T2-E1 Utu (USD) [3004Stock Ngahau]
- 3,000 pcs$0.07418
- Te waahanga waahanga:
- SI8469DB-T2-E1
- Kaihanga:
- Vishay Siliconix
- Whakaahuatanga Taipitopito:
- MOSFET P-CH 8V 3.6A MICRO.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Tauhoko - SCR - Mahi, Tauhou - IGBT - Mahi, Transistors - Whakahoahoa Whakahoahoa, Te Tauira P taraihi Mana, Diode - Zener - Tuhinga, Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Taumanako - SCR and Diode - RF ...
- Whakapai Tinana:
- We specialize in Vishay Siliconix SI8469DB-T2-E1 electronic components. SI8469DB-T2-E1 can be shipped within 24 hours after order. If you have any demands for SI8469DB-T2-E1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8469DB-T2-E1 Nga Hua Hua
Te waahanga waahanga :
SI8469DB-T2-E1
Kaihanga :
Vishay Siliconix
Whakaahuatanga :
MOSFET P-CH 8V 3.6A MICRO
Toa :
TrenchFET®
Wāhanga wahi :
Obsolete
Momo FET :
P-Channel
Hangarau :
MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) :
8V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
4.6A (Ta)
Koraha Motuhake (RW RW On, Min Rds I) :
4.5V
Rds On (Max) @ Id, Vgs :
64 mOhm @ 1.5A, 4.5V
Vgs (th) (Max) @ Id :
800mV @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
17nC @ 4.5V
Vgs (Max) :
±5V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
900pF @ 4V
Āhuahanga FET :
-
Te Whakamau Kaha (Max) :
780mW (Ta), 1.8W (Tc)
Taumaha Mahi :
-55°C ~ 150°C (TJ)
Momo Momo :
Surface Mount
Paetukutuku Pūrere Kaiwhakarato :
4-Microfoot
Paepae / Take :
4-UFBGA
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