SI7922DN-T1-GE3 Utu (USD) [103515Stock Ngahau]
- 1 pcs$0.37773
- 3,000 pcs$0.33477
- Te waahanga waahanga:
- SI7922DN-T1-GE3
- Kaihanga:
- Vishay Siliconix
- Whakaahuatanga Taipitopito:
- MOSFET 2N-CH 100V 1.8A 1212-8.
- Ko te wa kaiarahi paerewa a te kaihanga:
- I roto i te taonga
- Te whare noho:
- Kotahi Tau
- Chip Mai:
- Hong Kong
- RoHS:
- Te tikanga utu:
-
- Te ara kaipuke:
- Ngā Kāwai Whānau:
- KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Te Tauira P taraihi Mana, Tauhou - IGBT - Mahi, Transistors - FET, MOSFETs - RF, Transistors - JFET, Transistors - Whakahoahoa Whakahoahoa, Transistors - IGBTs - Kotahi, Transistors - Bipolar (BJT) - Arrays and Transistors - Bipolar (BJT) - Kotahi, I mua i te m ...
- Whakapai Tinana:
- We specialize in Vishay Siliconix SI7922DN-T1-GE3 electronic components. SI7922DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7922DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7922DN-T1-GE3 Nga Hua Hua
Te waahanga waahanga :
SI7922DN-T1-GE3
Kaihanga :
Vishay Siliconix
Whakaahuatanga :
MOSFET 2N-CH 100V 1.8A 1212-8
Toa :
TrenchFET®
Wāhanga wahi :
Active
Momo FET :
2 N-Channel (Dual)
Āhuahanga FET :
Logic Level Gate
Whakahinuhinu ki te Rauemi Waiata (Vds) :
100V
Akuanui - Tonu Tonu (Id) @ 25 ° C :
1.8A
Rds On (Max) @ Id, Vgs :
195 mOhm @ 2.5A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 250µA
Kaari Gate (Qg) (Max) @ Vgs :
8nC @ 10V
Te Mahinga Whakauru (Ciss) (Max) @ Vds :
-
Te Mana - Max :
1.3W
Taumaha Mahi :
-55°C ~ 150°C (TJ)
Momo Momo :
Surface Mount
Paepae / Take :
PowerPAK® 1212-8 Dual
Paetukutuku Pūrere Kaiwhakarato :
PowerPAK® 1212-8 Dual
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