NXP USA Inc. - PBRN113ZS,126

KEY Part #: K6527743

[2730Stock Ngahau]


    Te waahanga waahanga:
    PBRN113ZS,126
    Kaihanga:
    NXP USA Inc.
    Whakaahuatanga Taipitopito:
    TRANS PREBIAS NPN 0.7W TO92-3.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Transistors - Bipolar (BJT) - Kotahi, I mua i te m, Transistors - Whakahoahoa Whakahoahoa, Transistors - Bipolar (BJT) - Arrays, Diode - Zener - Tuhinga, Tauhoko - TRIACs, Transistors - FETs, MOSFETs - Arrays, Te Tauira P taraihi Mana and Transistors - Bipolar (BJT) - Arrays, I mua-Biased ...
    Whakapai Tinana:
    We specialize in NXP USA Inc. PBRN113ZS,126 electronic components. PBRN113ZS,126 can be shipped within 24 hours after order. If you have any demands for PBRN113ZS,126, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    PBRN113ZS,126 Nga Hua Hua

    Te waahanga waahanga : PBRN113ZS,126
    Kaihanga : NXP USA Inc.
    Whakaahuatanga : TRANS PREBIAS NPN 0.7W TO92-3
    Toa : -
    Wāhanga wahi : Obsolete
    Momo Whakawhiti : NPN - Pre-Biased
    Te Oranga - Te Kaikohi (Ic) (Max) : 800mA
    Paati - Whakahoki Kaikaha Kohikohi (Max) : 40V
    Kaihautū - Papa (R1) : 1 kOhms
    Kaikuhiko - Papa Rawhiti (R2) : 10 kOhms
    DC Gain o nāianei (hFE) (Min) @ Ic, Vce : 500 @ 300mA, 5V
    Te Hapati Vce (Max) @ Ib, Ic : 1.15V @ 8mA, 800mA
    I tenei wa - Kohinga Kohinga (Max) : 500nA
    Auau - Te whakawhiti : -
    Te Mana - Max : 700mW
    Momo Momo : Through Hole
    Paepae / Take : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    Paetukutuku Pūrere Kaiwhakarato : TO-92-3