Infineon Technologies - IPW60R080P7XKSA1

KEY Part #: K6416145

IPW60R080P7XKSA1 Utu (USD) [12758Stock Ngahau]

  • 1 pcs$2.95269
  • 10 pcs$2.63759
  • 100 pcs$2.16278
  • 500 pcs$1.75131
  • 1,000 pcs$1.47701

Te waahanga waahanga:
IPW60R080P7XKSA1
Kaihanga:
Infineon Technologies
Whakaahuatanga Taipitopito:
MOSFET N-CH 600V 37A TO247-3.
Ko te wa kaiarahi paerewa a te kaihanga:
I roto i te taonga
Te whare noho:
Kotahi Tau
Chip Mai:
Hong Kong
RoHS:
Te tikanga utu:
Te ara kaipuke:
Ngā Kāwai Whānau:
KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: Diode - RF, Transistors - Takenga Motuhake, Transistors - Bipolar (BJT) - Kotahi, Diode - Zener - Tuhinga, Transistors - Bipolar (BJT) - Arrays, Diode - Nga Kete Aiana, Tauhoko - TRIACs and Transistors - IGBTs - Arrays ...
Whakapai Tinana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPW60R080P7XKSA1 Nga Hua Hua

Te waahanga waahanga : IPW60R080P7XKSA1
Kaihanga : Infineon Technologies
Whakaahuatanga : MOSFET N-CH 600V 37A TO247-3
Toa : CoolMOS™ P7
Wāhanga wahi : Active
Momo FET : N-Channel
Hangarau : MOSFET (Metal Oxide)
Whakahinuhinu ki te Rauemi Waiata (Vds) : 600V
Akuanui - Tonu Tonu (Id) @ 25 ° C : 37A (Tc)
Koraha Motuhake (RW RW On, Min Rds I) : 10V
Rds On (Max) @ Id, Vgs : 80 mOhm @ 11.8A, 10V
Vgs (th) (Max) @ Id : 4V @ 590µA
Kaari Gate (Qg) (Max) @ Vgs : 51nC @ 10V
Vgs (Max) : ±20V
Te Mahinga Whakauru (Ciss) (Max) @ Vds : 2180pF @ 400V
Āhuahanga FET : -
Te Whakamau Kaha (Max) : 129W (Tc)
Taumaha Mahi : -55°C ~ 150°C (TJ)
Momo Momo : Through Hole
Paetukutuku Pūrere Kaiwhakarato : PG-TO247-3
Paepae / Take : TO-247-3

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